Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 108
... fluorine atoms bond to the observing carbon atom and the adjacent atoms . Figure 3 shows Cls spectra of the fluorinated and non - fluorinated PVDF . The deconvolution of chemically shifted components was carried out using the data of ...
... fluorine atoms bond to the observing carbon atom and the adjacent atoms . Figure 3 shows Cls spectra of the fluorinated and non - fluorinated PVDF . The deconvolution of chemically shifted components was carried out using the data of ...
Page 109
... fluorinated by the fluorine plasma . This application elminates the patterning process , because the fluorinated photo resist can be used as a interlayer dielectric . Exposing Fluorine plasma Photo resist Si wafer Figure 4. Direct ...
... fluorinated by the fluorine plasma . This application elminates the patterning process , because the fluorinated photo resist can be used as a interlayer dielectric . Exposing Fluorine plasma Photo resist Si wafer Figure 4. Direct ...
Page 242
... fluorine concentrations across the fluorinated SiO , films , before and after pressure cooker test ( PCT ) at 125 ° C , 2.0 atm , for 520 hours . Fluorine atomic concentrations and their uniformity across the films were analyzed by ...
... fluorine concentrations across the fluorinated SiO , films , before and after pressure cooker test ( PCT ) at 125 ° C , 2.0 atm , for 520 hours . Fluorine atomic concentrations and their uniformity across the films were analyzed by ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch