Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 3
Page 108
... fluorocarbon polymers in a solid state since the Cls binding energy shifts largely depending on how many fluorine atoms bond to the observing carbon atom and the adjacent atoms . Figure 3 shows Cls spectra of the fluorinated and non ...
... fluorocarbon polymers in a solid state since the Cls binding energy shifts largely depending on how many fluorine atoms bond to the observing carbon atom and the adjacent atoms . Figure 3 shows Cls spectra of the fluorinated and non ...
Page 252
... fluorocarbon gases because the high energy ions enhance the etching reaction in fluorocarbon plasma . Therefore , it is appropriate to use remote plasma with controlled bias voltage . III - 2 . Helicon reactor 4 6 To prove the potential ...
... fluorocarbon gases because the high energy ions enhance the etching reaction in fluorocarbon plasma . Therefore , it is appropriate to use remote plasma with controlled bias voltage . III - 2 . Helicon reactor 4 6 To prove the potential ...
Page 254
... fluorocarbon gases and plasma enhanced chemical vapor deposition to grow these films . The properties of the a - C : F films were found to be affected by the plasma source and source gases . The films deposited on the powered electrode ...
... fluorocarbon gases and plasma enhanced chemical vapor deposition to grow these films . The properties of the a - C : F films were found to be affected by the plasma source and source gases . The films deposited on the powered electrode ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch