Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 80
... foamed polymer . In foamed polymers designed for use in microelectronics devices , the pore sizes must be much smaller than the film thickness or any microelectronic features , i.e. ≤ 1 μm . Additionally , the foamed polymer should ...
... foamed polymer . In foamed polymers designed for use in microelectronics devices , the pore sizes must be much smaller than the film thickness or any microelectronic features , i.e. ≤ 1 μm . Additionally , the foamed polymer should ...
Page 88
... foamed polymers were measured by a gradient density column . Porosity and void formation was also studied by small ... foamed structures with the exception of PMDA / ODA . The orientation of PMDA / ODA chains and the resultant ...
... foamed polymers were measured by a gradient density column . Porosity and void formation was also studied by small ... foamed structures with the exception of PMDA / ODA . The orientation of PMDA / ODA chains and the resultant ...
Page 89
... foamed 100 nm polyimides is lower than that observed for non - foamed polyimides . We also observed a drop in refractive index of samples upon foaming . We have measured the dielectric constants of several thin films and the results are ...
... foamed 100 nm polyimides is lower than that observed for non - foamed polyimides . We also observed a drop in refractive index of samples upon foaming . We have measured the dielectric constants of several thin films and the results are ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch