Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 19
... followed by thermal cure as previously described [ 1-5 ] . The final cure temperature was either 350 ° C or 400 ° C as noted in the text . 19 Mat . Res . Soc . Symp . Proc . Vol . 381 © 1995 Materials Research Society Analytical ...
... followed by thermal cure as previously described [ 1-5 ] . The final cure temperature was either 350 ° C or 400 ° C as noted in the text . 19 Mat . Res . Soc . Symp . Proc . Vol . 381 © 1995 Materials Research Society Analytical ...
Page 73
... followed by continuous stirring for additional 2 days ( see Fig . 1 ) . Poly ( ester - alt - acid ) ( PEA ) precursors of three different alternating copolyimides were synthesized in NMP ( ca. 10 wt % solid content ) : poly [ ( p ...
... followed by continuous stirring for additional 2 days ( see Fig . 1 ) . Poly ( ester - alt - acid ) ( PEA ) precursors of three different alternating copolyimides were synthesized in NMP ( ca. 10 wt % solid content ) : poly [ ( p ...
Page 183
... followed by removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive action . The ...
... followed by removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive action . The ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch