Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 96
... frequency dependent between 1 kHz and 10 MHz whereas the loss factor rises from 0.0005 to 0.008 within the same range of frequencies . Table II . Dielectric properties of polyphenylquinoxaline films Aging / frequency Measured at é Tan ...
... frequency dependent between 1 kHz and 10 MHz whereas the loss factor rises from 0.0005 to 0.008 within the same range of frequencies . Table II . Dielectric properties of polyphenylquinoxaline films Aging / frequency Measured at é Tan ...
Page 113
... Frequency ( GHz ) Frequency ( GHz ) Tan Delta ' Tan Delta Figure 2. Complex Permittivity of TAE at K and K bands . u epsilon real Tan Delta 3.5 opellon real 0.05 Tan Dolla 113.
... Frequency ( GHz ) Frequency ( GHz ) Tan Delta ' Tan Delta Figure 2. Complex Permittivity of TAE at K and K bands . u epsilon real Tan Delta 3.5 opellon real 0.05 Tan Dolla 113.
Page 121
... frequency photons get absorbed before they reach the polyimide film , because the absorption coefficient in silicon increases with frequency [ 5 ] . The photon flux at the interface for different lamp configurations is shown in Figure 6 ...
... frequency photons get absorbed before they reach the polyimide film , because the absorption coefficient in silicon increases with frequency [ 5 ] . The photon flux at the interface for different lamp configurations is shown in Figure 6 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch