Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 96
Also , the last rows of Table II shows that the permittivity is not frequency dependent between 1 kHz and 10 MHz whereas the loss factor rises from 0.0005 to 0.008 within the same range of frequencies . Table II .
Also , the last rows of Table II shows that the permittivity is not frequency dependent between 1 kHz and 10 MHz whereas the loss factor rises from 0.0005 to 0.008 within the same range of frequencies . Table II .
Page 164
... “ A re - entrant cavity for measurement of complex permeability in the very - high frequency region , ” J. Res . ... “ A resonant cavity method for measuring dielectric properties at ultra - high frequencies , ” AIEE Trans . , vol .
... “ A re - entrant cavity for measurement of complex permeability in the very - high frequency region , ” J. Res . ... “ A resonant cavity method for measuring dielectric properties at ultra - high frequencies , ” AIEE Trans . , vol .
Page 212
These structures were preferred because of faster rise - times improving the measurement quality . The velocity of propagation corresponds to a dielectric constant of 2.7 . This is in good correlation with low frequency ( 1Mhz ) ...
These structures were preferred because of faster rise - times improving the measurement quality . The velocity of propagation corresponds to a dielectric constant of 2.7 . This is in good correlation with low frequency ( 1Mhz ) ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |