Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 35
... function of successive annealing temperature for 1 hour in N2 ambient . The weight loss of the polyimide is monitored by dynamic TGA combined with in- situ FTIR by which the decomposed segments can be identified . The initial weight ...
... function of successive annealing temperature for 1 hour in N2 ambient . The weight loss of the polyimide is monitored by dynamic TGA combined with in- situ FTIR by which the decomposed segments can be identified . The initial weight ...
Page 251
... function of rf power . 20 40 60 80 100 CF ( CH + CF ) [ % ] Fig . 2. Deposition rate and dielectric constant of the a - C films on the powered electrode as a function CF , percentage in the feed gases . bias voltage . It has been ...
... function of rf power . 20 40 60 80 100 CF ( CH + CF ) [ % ] Fig . 2. Deposition rate and dielectric constant of the a - C films on the powered electrode as a function CF , percentage in the feed gases . bias voltage . It has been ...
Page 253
... function of H , flow rate . RF source power was 2kW . helicon 60 C2F CF 4 thickness ( after anneal / as - deposited ) [ % ] 20 20 60 100 80 40- parallel - plate CH , + CF , powered electrode CH , + CF , grounded electrode 100 200 300 ...
... function of H , flow rate . RF source power was 2kW . helicon 60 C2F CF 4 thickness ( after anneal / as - deposited ) [ % ] 20 20 60 100 80 40- parallel - plate CH , + CF , powered electrode CH , + CF , grounded electrode 100 200 300 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch