Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 19
... TGA measurements to assess thermal stability at processing temperatures and
dynamic - mechanical analysis to ascertain the glass transition temperature and
the mechanical modulus at temperatures in excess of the glass transition .
... TGA measurements to assess thermal stability at processing temperatures and
dynamic - mechanical analysis to ascertain the glass transition temperature and
the mechanical modulus at temperatures in excess of the glass transition .
Page 26
So not only is the glass transition temperature very high , but the modulus
remains high even as the Tg is exceeded , ie . , the material should exhibit good
structural integrity even at the high metallization processing temperatures .
So not only is the glass transition temperature very high , but the modulus
remains high even as the Tg is exceeded , ie . , the material should exhibit good
structural integrity even at the high metallization processing temperatures .
Page 279
MODIFICATION EFFECTS IN ARGON PLASMA TREATED SIO , SPIN - ON
GLASS Min Park , Joong Whan Lee , Jin Gun Koo , Kyung Soo Kim , Hyung Joun
Yoo , Kee Soo Nam and Jin Jang * Semiconductor Division , Electronics and ...
MODIFICATION EFFECTS IN ARGON PLASMA TREATED SIO , SPIN - ON
GLASS Min Park , Joong Whan Lee , Jin Gun Koo , Kyung Soo Kim , Hyung Joun
Yoo , Kee Soo Nam and Jin Jang * Semiconductor Division , Electronics and ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers