Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 13
Properties ( Test Condition ) Glass transition Molsture uptake Dlolectric Constant ( out - of - plane ) 1 MHz ( electric ) 50 % RH , 20 ° C Thermal stability at 500 ° C , vacuum Thickness decrease 1.5 hrs ; 8 hrs . st % temp .
Properties ( Test Condition ) Glass transition Molsture uptake Dlolectric Constant ( out - of - plane ) 1 MHz ( electric ) 50 % RH , 20 ° C Thermal stability at 500 ° C , vacuum Thickness decrease 1.5 hrs ; 8 hrs . st % temp .
Page 19
... TGA measurements to assess thermal stability at processing temperatures and dynamic - mechanical analysis to ascertain the glass transition temperature and the mechanical modulus at temperatures in excess of the glass transition .
... TGA measurements to assess thermal stability at processing temperatures and dynamic - mechanical analysis to ascertain the glass transition temperature and the mechanical modulus at temperatures in excess of the glass transition .
Page 26
So not only is the glass transition temperature very high , but the modulus remains high even as the Tg is exceeded , ie . , the material should exhibit good structural integrity even at the high metallization processing temperatures .
So not only is the glass transition temperature very high , but the modulus remains high even as the Tg is exceeded , ie . , the material should exhibit good structural integrity even at the high metallization processing temperatures .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |