Low-dielectric Constant Materials |
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Page 19
400° C, typically associated with metallization and annealing steps; and dynamic
-mechanical analysis to ascertain the glass transition (Tg) and the change in
mechanical modulus at temperatures in excess of Tg. EXPERIMENTAL Materials
...
400° C, typically associated with metallization and annealing steps; and dynamic
-mechanical analysis to ascertain the glass transition (Tg) and the change in
mechanical modulus at temperatures in excess of Tg. EXPERIMENTAL Materials
...
Page 26
For the homopolymer, PMDA/TFMOB, it is especially important to note that the
storage modulus, E, decreases very little as the temperature exceeds the glass
transition temperature. Less than an order of magnitude drop is observed at Tg ...
For the homopolymer, PMDA/TFMOB, it is especially important to note that the
storage modulus, E, decreases very little as the temperature exceeds the glass
transition temperature. Less than an order of magnitude drop is observed at Tg ...
Page 148
In addition, a decrease in the polystyrene film thickness with increasing
temperature was observed for the case of very thin films (i.e. 100 A or less). Film
contraction took place at temperatures less than the glass transition temperature
...
In addition, a decrease in the polystyrene film thickness with increasing
temperature was observed for the case of very thin films (i.e. 100 A or less). Film
contraction took place at temperatures less than the glass transition temperature
...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI