Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 23
... groups on the polyimide backbone , The more distributed these fluorinated groups are , the lower the in - plane dielectric constant and the lower the anisotropy . Flexibilization of the polyimide backbone , especially with comonomers ...
... groups on the polyimide backbone , The more distributed these fluorinated groups are , the lower the in - plane dielectric constant and the lower the anisotropy . Flexibilization of the polyimide backbone , especially with comonomers ...
Page 57
... groups have been prepared . It was shown that the 4 - isopropenylphenoxy groups of these monomers undergo an acid catalyzed condensation - ring closure reaction to give mainly linear polymers which possess indane groups along their ...
... groups have been prepared . It was shown that the 4 - isopropenylphenoxy groups of these monomers undergo an acid catalyzed condensation - ring closure reaction to give mainly linear polymers which possess indane groups along their ...
Page 101
... groups and the glass transition temperature of the modified polymer main chain . The modification of phenolic , carboxylic or imide groups by t.BOC is well documented11 and the decomposition of the t.BOC group leading to carbon dioxide ...
... groups and the glass transition temperature of the modified polymer main chain . The modification of phenolic , carboxylic or imide groups by t.BOC is well documented11 and the decomposition of the t.BOC group leading to carbon dioxide ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch