Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 8
Page 273
... boron nitride ( h - BN ) have shown low dielectric constants in the range of 3 to 4 , these materials have been unsuitable for use as interconnect dielectrics due to poor thermal stability and environmental degradation . These ...
... boron nitride ( h - BN ) have shown low dielectric constants in the range of 3 to 4 , these materials have been unsuitable for use as interconnect dielectrics due to poor thermal stability and environmental degradation . These ...
Page 274
... BN ( c - BN ) films . a - tC films are stable - as indicated by Raman at temperatures up to 800 ° C in inert ... h - BN target , and a broad- beam Kaufman - type ion source . The typical deposition conditions leading to c - BN material ...
... BN ( c - BN ) films . a - tC films are stable - as indicated by Raman at temperatures up to 800 ° C in inert ... h - BN target , and a broad- beam Kaufman - type ion source . The typical deposition conditions leading to c - BN material ...
Page 276
... BN RESULTS All of the BN films were found to be highly insulating , with resistivities normal to the film ... h - BN layers and ECR deposited h - BN layers . Two or more separate samples were measured from each group . The c - BN samples ...
... BN RESULTS All of the BN films were found to be highly insulating , with resistivities normal to the film ... h - BN layers and ECR deposited h - BN layers . Two or more separate samples were measured from each group . The c - BN samples ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch