Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 10
... hard etching mask . Via holes are formed in a RIE etcher ( AMT 5000 ) by first etching the thin capping layer with fluorine plasma using photoresist pattern as an etching mask followed by etching the polymer in an oxygen plasma using ...
... hard etching mask . Via holes are formed in a RIE etcher ( AMT 5000 ) by first etching the thin capping layer with fluorine plasma using photoresist pattern as an etching mask followed by etching the polymer in an oxygen plasma using ...
Page 222
... Hardmask PEN Dep Polyimide Al ( Cu ) TVTIN Glue Via Photo Via Etch HM PEN P Isotropic P Anisotropic PEN / TIN Pl ... hardmask etch in CHF3 / O2 , ( 2 ) polyimide etch in O2 , ( 3 ) PEN / TiN etch in CHF3 / CF4 . The hardmask etch is ...
... Hardmask PEN Dep Polyimide Al ( Cu ) TVTIN Glue Via Photo Via Etch HM PEN P Isotropic P Anisotropic PEN / TIN Pl ... hardmask etch in CHF3 / O2 , ( 2 ) polyimide etch in O2 , ( 3 ) PEN / TiN etch in CHF3 / CF4 . The hardmask etch is ...
Page 226
... hardmask was left on top of the polyimide . The data show that polyimide coated M1 stripes have worse electromigration performance relative to the control split . An improvement is made when using a PEN liner under the polyimide film ...
... hardmask was left on top of the polyimide . The data show that polyimide coated M1 stripes have worse electromigration performance relative to the control split . An improvement is made when using a PEN liner under the polyimide film ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch