Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 35
... heating from 360 ° C to 460 ° C , No detectable weight loss and no decomposed segments from the polyimide are observed . Upon heating to 600 ° C from 460 ° C , a significant amount decomposed CF3 bonds ( 1019 cm1 and 1140 cm1 ) , small ...
... heating from 360 ° C to 460 ° C , No detectable weight loss and no decomposed segments from the polyimide are observed . Upon heating to 600 ° C from 460 ° C , a significant amount decomposed CF3 bonds ( 1019 cm1 and 1140 cm1 ) , small ...
Page 82
... heating the copolymer under appropriate conditions to effect the thermolysis and removal of the labile block . In ... heating rate of 10 ° C / min . Thermal gravimetric analyses ( TGA ) of the polymer films were conducted on a Perkin ...
... heating the copolymer under appropriate conditions to effect the thermolysis and removal of the labile block . In ... heating rate of 10 ° C / min . Thermal gravimetric analyses ( TGA ) of the polymer films were conducted on a Perkin ...
Page 84
... heated to slightly over 300 ° C in an inert atmosphere without undergoing thermolysis . When heated in the presence of oxygen , it quickly ... heating it to 250 ° C in air . This explains one of the larger challenges in the development of 84.
... heated to slightly over 300 ° C in an inert atmosphere without undergoing thermolysis . When heated in the presence of oxygen , it quickly ... heating it to 250 ° C in air . This explains one of the larger challenges in the development of 84.
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch