Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 48
Page 71
... higher chain order and in - plane orientation led to the higher tensile modulus and lower thermal expansivity in the alternating copolyimides . Such effect of comonomer sequence was found to be highly pronounced in copolyimides ...
... higher chain order and in - plane orientation led to the higher tensile modulus and lower thermal expansivity in the alternating copolyimides . Such effect of comonomer sequence was found to be highly pronounced in copolyimides ...
Page 78
... higher chain rigidity , chain order , and in - plane orientation give the higher modulus and the lower TEC in the film plane . Besides these factors , in this study it is evident for copolyimides that the sequence of comonomers also is ...
... higher chain rigidity , chain order , and in - plane orientation give the higher modulus and the lower TEC in the film plane . Besides these factors , in this study it is evident for copolyimides that the sequence of comonomers also is ...
Page 253
... higher deposition rate of CF , as compared with CF , in the helicon reactor is due to the higher CF , radical density in the C , F plasma . The XPS spectra of the films are shown in figure 3 ( c ) , ( d ) . The structures of the both ...
... higher deposition rate of CF , as compared with CF , in the helicon reactor is due to the higher CF , radical density in the C , F plasma . The XPS spectra of the films are shown in figure 3 ( c ) , ( d ) . The structures of the both ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch