Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 71
The alternating copolyimides exhibited relatively higher chain order and in -
plane orientation in films than the random copolyimides . The higher chain order
and in - plane orientation led to the higher tensile modulus and lower thermal ...
The alternating copolyimides exhibited relatively higher chain order and in -
plane orientation in films than the random copolyimides . The higher chain order
and in - plane orientation led to the higher tensile modulus and lower thermal ...
Page 78
in - plane orientation : The higher chain rigidity , chain order , and in - plane
orientation give the higher modulus and the lower TEC in the film plane . Besides
these factors , in this study it is evident for copolyimides that the sequence of ...
in - plane orientation : The higher chain rigidity , chain order , and in - plane
orientation give the higher modulus and the lower TEC in the film plane . Besides
these factors , in this study it is evident for copolyimides that the sequence of ...
Page 142
At higher temperature , the Young ' s modulus reduces significantly and the
elongation at break ( EAB ) is substantially higher ( see Table 1 ) . Young ' s
modulus of various electronic materials are listed in Table 3 for comparison
purpose .
At higher temperature , the Young ' s modulus reduces significantly and the
elongation at break ( EAB ) is substantially higher ( see Table 1 ) . Young ' s
modulus of various electronic materials are listed in Table 3 for comparison
purpose .
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers