Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 147
... hydrogen passivated . Tg of thin films was determined by monitoring the film thickness as a function of temperature ... hydrogen passivated surface prepared as follows . The native oxide was etched away with 147 Mat . Res . Soc . Symp ...
... hydrogen passivated . Tg of thin films was determined by monitoring the film thickness as a function of temperature ... hydrogen passivated surface prepared as follows . The native oxide was etched away with 147 Mat . Res . Soc . Symp ...
Page 273
... hydrogen ( a - tC ) and depositing the cubic phase of BN ( c - BN ) . The dielectric characteristics of hydrogen - free DLC and c - BN that have been deposited by pulsed - laser deposition ( PLD ) have been evaluated using metal ...
... hydrogen ( a - tC ) and depositing the cubic phase of BN ( c - BN ) . The dielectric characteristics of hydrogen - free DLC and c - BN that have been deposited by pulsed - laser deposition ( PLD ) have been evaluated using metal ...
Page 276
... hydrogen bonds to the trigonally - coordinated carbon , stabilizing the bonding into the sp3 coordination . Apparently the degree of hydrogen saturation of sp2 bonds in the a - tC material may not be as complete as that of DLC material ...
... hydrogen bonds to the trigonally - coordinated carbon , stabilizing the bonding into the sp3 coordination . Apparently the degree of hydrogen saturation of sp2 bonds in the a - tC material may not be as complete as that of DLC material ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch