Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 8
... imide and isoimide units is formed . We shall term this polymer a cyclochain polymer with different units . The third stage corresponds to the catalytic isomerization of isoimide units into the imide rings ( i.e. , to isoimide- imide ...
... imide and isoimide units is formed . We shall term this polymer a cyclochain polymer with different units . The third stage corresponds to the catalytic isomerization of isoimide units into the imide rings ( i.e. , to isoimide- imide ...
Page 1102
... IMIDE RESINS AND THEIR MODIFICATION WITH REACTIVE LIQUID RUBBERS : ADHESIVE PROPERTIES Ginu Abraham , S. Packirisamy ... imide resins obtained by curing Araldite GY 250 ( difunctional ) and Araldite EPN 1138 ( polyfunctional ) with imide ...
... IMIDE RESINS AND THEIR MODIFICATION WITH REACTIVE LIQUID RUBBERS : ADHESIVE PROPERTIES Ginu Abraham , S. Packirisamy ... imide resins obtained by curing Araldite GY 250 ( difunctional ) and Araldite EPN 1138 ( polyfunctional ) with imide ...
Page 666
... Imide P110H P11 Imide -100 -50 0 50 100 150 Temperature / ° C Figure 2. DSC Thermograms of P11OH , P11 Imide and Their Mixture It is interesting that , as shown in Figure 2 , the DSC thermogram of 10 wt . % of P110H in P11 imide does ...
... Imide P110H P11 Imide -100 -50 0 50 100 150 Temperature / ° C Figure 2. DSC Thermograms of P11OH , P11 Imide and Their Mixture It is interesting that , as shown in Figure 2 , the DSC thermogram of 10 wt . % of P110H in P11 imide does ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch