Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 36
... imidization process to complete . The degree of imidization of the polyimide film is determined from its FTIR spectrum by measuring the relative intensities of the 1737 cm ́1 imide C = O symmetric stretch as compared to an internal ...
... imidization process to complete . The degree of imidization of the polyimide film is determined from its FTIR spectrum by measuring the relative intensities of the 1737 cm ́1 imide C = O symmetric stretch as compared to an internal ...
Page 75
... imidization temperatures . BPDA - PDA , which has a Tg of ca. 320 ° C ( that is , the onset temperature of glass ... imidized at 400 ° C . CuKa radiation was used . in the solid state , revealing a high degree of 155 75.
... imidization temperatures . BPDA - PDA , which has a Tg of ca. 320 ° C ( that is , the onset temperature of glass ... imidized at 400 ° C . CuKa radiation was used . in the solid state , revealing a high degree of 155 75.
Page 82
... imidization . The resulting viscous polymer solution was cooled to room temperature and precipitated into 800 mL of hexane , washed 2X in water / methanol , filtered and vacuum dried to constant weight to yield 4.8 g of polymer ...
... imidization . The resulting viscous polymer solution was cooled to room temperature and precipitated into 800 mL of hexane , washed 2X in water / methanol , filtered and vacuum dried to constant weight to yield 4.8 g of polymer ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch