Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 64
We have observed qualitatively that adhesion of FLARET coatings to SiO2
substrate is improved by the use of a standard adhesion promoter . A standard
tape pull test ( formally ASTM D - 3359 - 87 ) was employed . However , we have
used a ...
We have observed qualitatively that adhesion of FLARET coatings to SiO2
substrate is improved by the use of a standard adhesion promoter . A standard
tape pull test ( formally ASTM D - 3359 - 87 ) was employed . However , we have
used a ...
Page 124
Using isothermal TGA , MS and FTIR , we can determine thermal stability of
organic polymers for low K ILD , and identify the thermally weak chemical bond to
facilitate reengineering polymers with improved thermal stability . This simple ...
Using isothermal TGA , MS and FTIR , we can determine thermal stability of
organic polymers for low K ILD , and identify the thermally weak chemical bond to
facilitate reengineering polymers with improved thermal stability . This simple ...
Page 279
... film by Ar plasma is related to the radiation damage and the reconstruction of
the atomic structure during the plasma exposure . The role of metastable Ar ( Ar *
) appears to be very important to improve the SOG film ; SOG film is more relaxed
...
... film by Ar plasma is related to the radiation damage and the reconstruction of
the atomic structure during the plasma exposure . The role of metastable Ar ( Ar *
) appears to be very important to improve the SOG film ; SOG film is more relaxed
...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers