Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 36
Page 23
... on non - rod - like aromatic structures with high in - plane CTE values , always showed high thermal stress , typically 30-50 MPa . In addition to the normally measured out - of - plane ( through the thickness ) dielectric constant , the in ...
... on non - rod - like aromatic structures with high in - plane CTE values , always showed high thermal stress , typically 30-50 MPa . In addition to the normally measured out - of - plane ( through the thickness ) dielectric constant , the in ...
Page 78
... in - plane orientation : The higher chain rigidity , chain order , and in - plane orientation give the higher modulus and the lower TEC in the film plane . Besides these factors , in this study it is evident for copolyimides that the ...
... in - plane orientation : The higher chain rigidity , chain order , and in - plane orientation give the higher modulus and the lower TEC in the film plane . Besides these factors , in this study it is evident for copolyimides that the ...
Page 142
... in - plane CTE about 35 ppm / ° C . Figure 2 shows the ∞ of a 24.2 μm thick PMDA - ODA polyimide film between 20 ° C to 400 ° C . Since the glass transition temperature is above 400 ° C , the curve does not show a large slope change in ...
... in - plane CTE about 35 ppm / ° C . Figure 2 shows the ∞ of a 24.2 μm thick PMDA - ODA polyimide film between 20 ° C to 400 ° C . Since the glass transition temperature is above 400 ° C , the curve does not show a large slope change in ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch