Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 23
In addition to the normally measured out - of - plane ( through the thickness ) dielectric constant , the in - plane dielectric constant , which is difficult to measure , is of particular importance for ILD applications .
In addition to the normally measured out - of - plane ( through the thickness ) dielectric constant , the in - plane dielectric constant , which is difficult to measure , is of particular importance for ILD applications .
Page 78
in - plane orientation : The higher chain rigidity , chain order , and in - plane orientation give the higher modulus and the lower TEC in the film plane . Besides these factors , in this study it is evident for copolyimides that the ...
in - plane orientation : The higher chain rigidity , chain order , and in - plane orientation give the higher modulus and the lower TEC in the film plane . Besides these factors , in this study it is evident for copolyimides that the ...
Page 142
Å and c = 31.986 Å . Their studies showed that the lack of 001 peaks in the reflection pattern indicates a strongly preferred orientation of the molecular chains along the film plane . The coherence length , i.e. , the average ...
Å and c = 31.986 Å . Their studies showed that the lack of 001 peaks in the reflection pattern indicates a strongly preferred orientation of the molecular chains along the film plane . The coherence length , i.e. , the average ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |