Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 51
Page 251
... increase in the dielectric constant on the powered electrode with rf power is due to the crosslinking of the films . Second , we mounted the sample on the powered electrode and studied CF , additional effect in order to introduce the ...
... increase in the dielectric constant on the powered electrode with rf power is due to the crosslinking of the films . Second , we mounted the sample on the powered electrode and studied CF , additional effect in order to introduce the ...
Page 281
... increasing treatment time from 10 min to 150 min . With an increase of treatment time , the Si - O - Si peak shifts to higher wave number and the intensity of Si - O - Si modes decreases . The peak shift of Si- O - Si from 1049 cm to ...
... increasing treatment time from 10 min to 150 min . With an increase of treatment time , the Si - O - Si peak shifts to higher wave number and the intensity of Si - O - Si modes decreases . The peak shift of Si- O - Si from 1049 cm to ...
Page 283
... increasing either plasma treatment temperature or treatment time , and the increase of refractive index with increasing plasma treatment time , are resulted from the densification . Furthermore , a long - time plasma treatment reduces ...
... increasing either plasma treatment temperature or treatment time , and the increase of refractive index with increasing plasma treatment time , are resulted from the densification . Furthermore , a long - time plasma treatment reduces ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch