Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 251
Therefore the increase in the dielectric constant on the powered electrode with rf power is due to the crosslinking of the films . Second , we mounted the sample on the powered electrode and studied CF , additional effect in order to ...
Therefore the increase in the dielectric constant on the powered electrode with rf power is due to the crosslinking of the films . Second , we mounted the sample on the powered electrode and studied CF , additional effect in order to ...
Page 281
The intensity of methyl ( -CH3 ) group decreases with increasing treatment time from 10 min to 150 min . With an increase of treatment time , the Si - O - Si peak shifts to higher wave number and the intensity of Si - O - Si modes ...
The intensity of methyl ( -CH3 ) group decreases with increasing treatment time from 10 min to 150 min . With an increase of treatment time , the Si - O - Si peak shifts to higher wave number and the intensity of Si - O - Si modes ...
Page 283
The breakdown strength of SOG film increases and leakage current decreases with Ar plasma treatment time . ... The decrease of leakage current and increase of breakdown strength in SOG film by Ar plasma treatment seem to be resulted ...
The breakdown strength of SOG film increases and leakage current decreases with Ar plasma treatment time . ... The decrease of leakage current and increase of breakdown strength in SOG film by Ar plasma treatment seem to be resulted ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |