Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 40
... indicating a significant positive and negative charges generated at the insulator and semiconductor interface or in the ... indicate that the charge in the fluorinated polyimide film annealed at temperature above 350 ° C are mobile . For ...
... indicating a significant positive and negative charges generated at the insulator and semiconductor interface or in the ... indicate that the charge in the fluorinated polyimide film annealed at temperature above 350 ° C are mobile . For ...
Page 77
... indicate that their molecular chain order and in - plane orientation are relatively poor compared with alternating PMDA- BPDA / PDA copolyimide . For alternating PMDA - BTDA / PDA copolyimide , the projected length of chemical repeat ...
... indicate that their molecular chain order and in - plane orientation are relatively poor compared with alternating PMDA- BPDA / PDA copolyimide . For alternating PMDA - BTDA / PDA copolyimide , the projected length of chemical repeat ...
Page 275
... indicated resistivities > 106 cm even for samples exhibiting resistivities normal to the film plane < 103 Ncm , thus ... indicate the mean of several measurements on one or two different samples at each deposition condition . The error ...
... indicated resistivities > 106 cm even for samples exhibiting resistivities normal to the film plane < 103 Ncm , thus ... indicate the mean of several measurements on one or two different samples at each deposition condition . The error ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch