Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 80
It is important that the initial block copolymer morphology is in the desired size and shape of the foamed structure that is eventually desired . Since we are concerned with generating non - interconnected porous foams with domains in ...
It is important that the initial block copolymer morphology is in the desired size and shape of the foamed structure that is eventually desired . Since we are concerned with generating non - interconnected porous foams with domains in ...
Page 88
Characteristics of Polyimide Foams Initial Labile Block Composition , Vol . % Density ( g / cmo ) Volume Fraction of Voids ( Porosity ) , % Sample Entry PMDA / 3FDA Polyimide 2 3 1.35 11 1.17 13 1.11 18 DU W N 4 27 1.13 16 5 27 30 6 22 ...
Characteristics of Polyimide Foams Initial Labile Block Composition , Vol . % Density ( g / cmo ) Volume Fraction of Voids ( Porosity ) , % Sample Entry PMDA / 3FDA Polyimide 2 3 1.35 11 1.17 13 1.11 18 DU W N 4 27 1.13 16 5 27 30 6 22 ...
Page 148
Initial film thicknesses were varied from 45 to 2000 Å . X - ray reflectivity measurements were conducted with a theta - theta goniometer equipped with a energy sensitive detector . The energy resolution was set at 200 eV around Cu Ką ...
Initial film thicknesses were varied from 45 to 2000 Å . X - ray reflectivity measurements were conducted with a theta - theta goniometer equipped with a energy sensitive detector . The energy resolution was set at 200 eV around Cu Ką ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |