Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 29
It is concluded that this polymer is a possible candidate for ILD application .
Introduction : As the devices continue to scale down below 0 . 35um in silicon
integrated circuits applications , the device interconnection network becomes a
limiting ...
It is concluded that this polymer is a possible candidate for ILD application .
Introduction : As the devices continue to scale down below 0 . 35um in silicon
integrated circuits applications , the device interconnection network becomes a
limiting ...
Page 45
... M . Lu , Rensselaer Polytechnic Institute , Center for Integrated Electronics ,
Troy , New York 12180 ABSTRACT Several novel processes have been
developed in our lab to synthesize and deposit polymers that have extremely low
dielectric ...
... M . Lu , Rensselaer Polytechnic Institute , Center for Integrated Electronics ,
Troy , New York 12180 ABSTRACT Several novel processes have been
developed in our lab to synthesize and deposit polymers that have extremely low
dielectric ...
Page 217
INTEGRATION OF BPDA - PDA POLYIMIDE WITH TWO LEVELS OF Al ( Cu )
INTERCONNECTS J . T . WETZEL * , Y . T ... INTRODUCTION Current trends in
development of high performance integrated circuits are pointing toward
increasing ...
INTEGRATION OF BPDA - PDA POLYIMIDE WITH TWO LEVELS OF Al ( Cu )
INTERCONNECTS J . T . WETZEL * , Y . T ... INTRODUCTION Current trends in
development of high performance integrated circuits are pointing toward
increasing ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers