Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 31
... integrated circuits applications , the device interconnection network becomes a limiting factor in determining the chip performance such as the speed , area , reliability and yield of ULSI circuits [ 1 ] . This limitation may be ...
... integrated circuits applications , the device interconnection network becomes a limiting factor in determining the chip performance such as the speed , area , reliability and yield of ULSI circuits [ 1 ] . This limitation may be ...
Page 60
... circuit , it is possible to predict the relative influence of insulators with ... integrated circuit IMD in production by IBM from the early 1970's through ... circuits is illustrated by the present Symposium , as well as other symposia ...
... circuit , it is possible to predict the relative influence of insulators with ... integrated circuit IMD in production by IBM from the early 1970's through ... circuits is illustrated by the present Symposium , as well as other symposia ...
Page 162
... integrated circuits , " IEEE Trans . Microwave Theory Tech . , vol . MTT - 21 , pp . 142-143 , March 1973 . [ 12 ] L. S. Napoli , " A simple technique for the accurate determination of microwave dielectric constant for microwave integrated ...
... integrated circuits , " IEEE Trans . Microwave Theory Tech . , vol . MTT - 21 , pp . 142-143 , March 1973 . [ 12 ] L. S. Napoli , " A simple technique for the accurate determination of microwave dielectric constant for microwave integrated ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch