Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page ix
... integration issues related to the next generation on - chip interconnect applications . Roadmaps outlining the need and timing on the use of low - dielectric constant materials in multilevel interconnect schemes were reported by ...
... integration issues related to the next generation on - chip interconnect applications . Roadmaps outlining the need and timing on the use of low - dielectric constant materials in multilevel interconnect schemes were reported by ...
Page 197
... INTEGRATION OF LOW - DIELECTRIC - CONSTANT MATERIALS SHIN - PUU JENG , KELLY TAYLOR , MI - CHANG CHANG , LARRY TING , CHARLES LEE , PETER MCANALLY , TOM SEHA , KEN NUMATA , TSUYOSHI TANAKA AND ROBERT H. HAVEMANN Semiconductor Process ...
... INTEGRATION OF LOW - DIELECTRIC - CONSTANT MATERIALS SHIN - PUU JENG , KELLY TAYLOR , MI - CHANG CHANG , LARRY TING , CHARLES LEE , PETER MCANALLY , TOM SEHA , KEN NUMATA , TSUYOSHI TANAKA AND ROBERT H. HAVEMANN Semiconductor Process ...
Page 217
... integration with Al ( Cu ) in a double level metal , BiCMOS 4MB SRAM device , with 0.5μm groundrules . Process challenges unique to integration of an organic rather than inorganic insulator are described and experimental features ...
... integration with Al ( Cu ) in a double level metal , BiCMOS 4MB SRAM device , with 0.5μm groundrules . Process challenges unique to integration of an organic rather than inorganic insulator are described and experimental features ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch