Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 4
... interconnection between circuits . The interconnect delay is getting proportionally more important with each device generation . For devices with channel length of 0.25 um , up to 50 % of the circuit delay could be due to the RC delay ...
... interconnection between circuits . The interconnect delay is getting proportionally more important with each device generation . For devices with channel length of 0.25 um , up to 50 % of the circuit delay could be due to the RC delay ...
Page 177
... interconnect structures , low K insulators allow a higher packing density in any interconnect level for a specified amount of adjacent line coupling . Such a higher conductor packing density in an interconnect plane can decrease chip ...
... interconnect structures , low K insulators allow a higher packing density in any interconnect level for a specified amount of adjacent line coupling . Such a higher conductor packing density in an interconnect plane can decrease chip ...
Page 178
... INTERCONNECT TECHNOLOGY OVERVIEW A brief overview of copper interconnect technology is best contrasted with leading - edge aluminum interconnect technology . We assume that all advanced interconnect alternatives will include globally ...
... INTERCONNECT TECHNOLOGY OVERVIEW A brief overview of copper interconnect technology is best contrasted with leading - edge aluminum interconnect technology . We assume that all advanced interconnect alternatives will include globally ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch