Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 121
... interface for different lamp configurations is shown in Figure 6. This was calculated based on approximately 100 % transmission coefficient for the polyimide film . For the combined thickness of the silicon boat and wafer that was used ...
... interface for different lamp configurations is shown in Figure 6. This was calculated based on approximately 100 % transmission coefficient for the polyimide film . For the combined thickness of the silicon boat and wafer that was used ...
Page 147
... interface depended on the interaction energy between the two materials in contact . Therefore one expects that the local chain dynamics at interfaces also depends on the interaction energy . In addition , these calculations predicted ...
... interface depended on the interaction energy between the two materials in contact . Therefore one expects that the local chain dynamics at interfaces also depends on the interaction energy . In addition , these calculations predicted ...
Page 149
... interface or free surface . It has been suggested that the density , hence the glass transition temperature , of the material near the free surface is lower than the bulk value . Within a thick film the distance between the free surface ...
... interface or free surface . It has been suggested that the density , hence the glass transition temperature , of the material near the free surface is lower than the bulk value . Within a thick film the distance between the free surface ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch