Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 19
FLUORINATED , LOW THERMAL EXPANSION COEFFICIENT POLYIMIDES FOR INTERLAYER DIELECTRIC APPLICATIONS : THERMAL STABILITY , REFRACTIVE INDEX AND HIGH TEMPERATURE MODULUS MEASUREMENTS BRIAN C. AUMAN DuPont Electronic Materials , Experimental ...
FLUORINATED , LOW THERMAL EXPANSION COEFFICIENT POLYIMIDES FOR INTERLAYER DIELECTRIC APPLICATIONS : THERMAL STABILITY , REFRACTIVE INDEX AND HIGH TEMPERATURE MODULUS MEASUREMENTS BRIAN C. AUMAN DuPont Electronic Materials , Experimental ...
Page 105
Finally , we proposed direct patterning of interlayer dielectrics using plasma fluorination . INTRODUCTION € High - speed integrated circuits ( IC ) have been revolutionizing microelectronics industries and are forming the backbone of ...
Finally , we proposed direct patterning of interlayer dielectrics using plasma fluorination . INTRODUCTION € High - speed integrated circuits ( IC ) have been revolutionizing microelectronics industries and are forming the backbone of ...
Page 239
FLUORINATED SIO , FILMS FOR INTERLAYER DIELECTRICS IN QUARTER - MICRON ULSI MULTILEVEL INTERCONNECTIONS TETSUYA HOMMA ULSI Device Development Laboratories , NEC Corporation 1120 Shimokuzawa , Sagamihara , Kanagawa 229 , JAPAN ABSTRACT ...
FLUORINATED SIO , FILMS FOR INTERLAYER DIELECTRICS IN QUARTER - MICRON ULSI MULTILEVEL INTERCONNECTIONS TETSUYA HOMMA ULSI Device Development Laboratories , NEC Corporation 1120 Shimokuzawa , Sagamihara , Kanagawa 229 , JAPAN ABSTRACT ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |