Low-dielectric Constant Materials |
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Page 85
The labile block must be stable enough at high temperatures to permit curing,
annealing and solvent removal, but it must also be thermally labile below the
polyimide matrices Tg in order to permit foaming without collapse. Other
thermally ...
The labile block must be stable enough at high temperatures to permit curing,
annealing and solvent removal, but it must also be thermally labile below the
polyimide matrices Tg in order to permit foaming without collapse. Other
thermally ...
Page 86
The labile block oligomer was reacted with stoichiometric amounts of the
appropriate diamine and dianhydride. The resulting poly(amic acid) solutions
were then cast and heated to give thin films, or in the case of the soluble
polyimides, ...
The labile block oligomer was reacted with stoichiometric amounts of the
appropriate diamine and dianhydride. The resulting poly(amic acid) solutions
were then cast and heated to give thin films, or in the case of the soluble
polyimides, ...
Page 87
CF3 6FDAm 6FXDA 25 C 24 h NMP or/ 70 C 16 h " Pyridine / Ac-O-Ac Labile
Block Polypropylene oxide) O F3C CF3 0 Scheme 3. Synthesis of Polyimides:
Poly(amic acid) Route we concentrated our efforts on copolymers containing 15 -
30% ...
CF3 6FDAm 6FXDA 25 C 24 h NMP or/ 70 C 16 h " Pyridine / Ac-O-Ac Labile
Block Polypropylene oxide) O F3C CF3 0 Scheme 3. Synthesis of Polyimides:
Poly(amic acid) Route we concentrated our efforts on copolymers containing 15 -
30% ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI