Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 85
... labile block must be stable enough at high temperatures to permit curing , annealing and solvent removal , but it must also be thermally labile below the polyimide matrices T , in order to permit foaming without collapse . Other thermally ...
... labile block must be stable enough at high temperatures to permit curing , annealing and solvent removal , but it must also be thermally labile below the polyimide matrices T , in order to permit foaming without collapse . Other thermally ...
Page 86
... labile block oligomer was reacted with stoichiometric amounts of the appropriate diamine and diethyl pyromellitate diacyl chloride giving the intermediate CF3 F3C CF3 -OEt H2N- -NH2 + + трафом -NH2 Eto- 6FDAM 6FXDA Labile Block Poly ...
... labile block oligomer was reacted with stoichiometric amounts of the appropriate diamine and diethyl pyromellitate diacyl chloride giving the intermediate CF3 F3C CF3 -OEt H2N- -NH2 + + трафом -NH2 Eto- 6FDAM 6FXDA Labile Block Poly ...
Page 87
... Labile Block Poly ( propylene oxide ) F3C CF3 70 C 16 h Pyridine / Ac - O - Ac X F3C CF3 @iofrot n Scheme 3. Synthesis of Polyimides : Poly ( amic acid ) Route we concentrated our efforts on copolymers containing 15 - 30 % ( vol ) labile ...
... Labile Block Poly ( propylene oxide ) F3C CF3 70 C 16 h Pyridine / Ac - O - Ac X F3C CF3 @iofrot n Scheme 3. Synthesis of Polyimides : Poly ( amic acid ) Route we concentrated our efforts on copolymers containing 15 - 30 % ( vol ) labile ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch