Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 10
The purposes of the capping layer is to protect the polymer film from the
environment ( such as moisture absorption ) and to act as a hard etching mask .
Via holes are formed in a RIE etcher ( AMT 5000 ) by first etching the thin capping
layer ...
The purposes of the capping layer is to protect the polymer film from the
environment ( such as moisture absorption ) and to act as a hard etching mask .
Via holes are formed in a RIE etcher ( AMT 5000 ) by first etching the thin capping
layer ...
Page 190
After exposure with a GCA Model 6100B I - line wafer stepper , the parylene ( and
polish stop layer which also serves as an etch mark during parylene patterning )
was etched in an oxygen - based plasma . Following resist removal , a 40 nm ...
After exposure with a GCA Model 6100B I - line wafer stepper , the parylene ( and
polish stop layer which also serves as an etch mark during parylene patterning )
was etched in an oxygen - based plasma . Following resist removal , a 40 nm ...
Page 210
Photoresist Stencil 0000000 Release Laver Parylene Substrate + Previously
Fabricated Layers Deposit Parylene ; - Coat release layer ; 2 . Pattern resist : etch
stencil and release : layer and RIE etch Parylene 3 . Deposit Metal 4 . Lift - off
metal ...
Photoresist Stencil 0000000 Release Laver Parylene Substrate + Previously
Fabricated Layers Deposit Parylene ; - Coat release layer ; 2 . Pattern resist : etch
stencil and release : layer and RIE etch Parylene 3 . Deposit Metal 4 . Lift - off
metal ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers