Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
From inside the book
Results 1-3 of 55
Page 10
A thin layer of CVD SIO , or SiN . layer ( about 100 nm ) is first deposited over the polymer film as a capping layer . The purposes of the capping layer is to protect the polymer film from the environment ( such as moisture absorption ) ...
A thin layer of CVD SIO , or SiN . layer ( about 100 nm ) is first deposited over the polymer film as a capping layer . The purposes of the capping layer is to protect the polymer film from the environment ( such as moisture absorption ) ...
Page 210
Photoresist Stencil Release laver Parylene Substrate + Previously Fabricated Layers 1. Deposit Parylene ; Coat release layer ; stehcil and photoresist 2. Pattern resist eich Parylene and release ; layer and 3. Deposit Metal 4.
Photoresist Stencil Release laver Parylene Substrate + Previously Fabricated Layers 1. Deposit Parylene ; Coat release layer ; stehcil and photoresist 2. Pattern resist eich Parylene and release ; layer and 3. Deposit Metal 4.
Page 211
Cross - section of a four layer Al / PA test structure . a BANIN BER The test structures were evaluated electrically using Time Domain Reflectometry ( TDR ) . The transmitted waveforms for a ustripline ( four layer ) Al / PA structure ...
Cross - section of a four layer Al / PA test structure . a BANIN BER The test structures were evaluated electrically using Time Domain Reflectometry ( TDR ) . The transmitted waveforms for a ustripline ( four layer ) Al / PA structure ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |