Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 78
... less flexible than the ether linkage of ODPA . On the other hand , BPDA unit has a rotational disorder along the biphenyl bond . Thus , the BPDA may be less rigid than PMDA unit . In comparison , the rigidity is in the order PMDA > BPDA ...
... less flexible than the ether linkage of ODPA . On the other hand , BPDA unit has a rotational disorder along the biphenyl bond . Thus , the BPDA may be less rigid than PMDA unit . In comparison , the rigidity is in the order PMDA > BPDA ...
Page 148
... less ) . Film contraction took place at temperatures less than the glass transition temperature measured for polystyrene in the bulk , 104 ° C [ 10 ] . The films with initial film thicknesses of 264 Å and above display little change ...
... less ) . Film contraction took place at temperatures less than the glass transition temperature measured for polystyrene in the bulk , 104 ° C [ 10 ] . The films with initial film thicknesses of 264 Å and above display little change ...
Page 250
... less than 10 Torr . 100 % CH , and CF , were introduced into the chamber through electrically controlled mass flow controllers . The deposition pressure ranged from 100 to 200 mTorr . The parallel electrodes housed in the vacuum camber ...
... less than 10 Torr . 100 % CH , and CF , were introduced into the chamber through electrically controlled mass flow controllers . The deposition pressure ranged from 100 to 200 mTorr . The parallel electrodes housed in the vacuum camber ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch