Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 24
... Loss in Nitrogen of Fluorinated Polyimide Copolymers 50 50 Polyimide Cure Temp ° % Wt loss 0-1 hr RT - 375 ° C % Wt loss 1 - 14 hr @ 375 ° C Rate % / hr 1 - 14 hr @ 375 ° C % Wt loss 0 - 1 hr RT - 425 ° C % Wt loss 1 - 14 hr @ 425 ° C ...
... Loss in Nitrogen of Fluorinated Polyimide Copolymers 50 50 Polyimide Cure Temp ° % Wt loss 0-1 hr RT - 375 ° C % Wt loss 1 - 14 hr @ 375 ° C Rate % / hr 1 - 14 hr @ 375 ° C % Wt loss 0 - 1 hr RT - 425 ° C % Wt loss 1 - 14 hr @ 425 ° C ...
Page 35
... loss of the polyimide is monitored by dynamic TGA combined with in- situ FTIR by which the decomposed segments can be identified . The initial weight loss of the polyimide started slowly at 250 ° C as shown in Fig . 3. This is due to ...
... loss of the polyimide is monitored by dynamic TGA combined with in- situ FTIR by which the decomposed segments can be identified . The initial weight loss of the polyimide started slowly at 250 ° C as shown in Fig . 3. This is due to ...
Page 57
... Loss Temp . of 10 % Wt . Loss in N2 ( ° C ) in air ( ° C ) 1 460 245 400 370 455 455 458 458 7 525 523 7 522 522 CONCLUSIONS The synthesis of a series of difunctional monomers incorporating polymerizable 4 - isopropenylphenoxy groups ...
... Loss Temp . of 10 % Wt . Loss in N2 ( ° C ) in air ( ° C ) 1 460 245 400 370 455 455 458 458 7 525 523 7 522 522 CONCLUSIONS The synthesis of a series of difunctional monomers incorporating polymerizable 4 - isopropenylphenoxy groups ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch