Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 46
... deposit polymers, such as Teflon AF 1600 (amorphous fluoropolymer),
Parylene-F (fluorinated), poly(naphthalene) (PNT-N), poly(fluorinated
naphthalene) (PNT-F), which have extremely low dielectric constants (below 2.7)
in thin film form.
... deposit polymers, such as Teflon AF 1600 (amorphous fluoropolymer),
Parylene-F (fluorinated), poly(naphthalene) (PNT-N), poly(fluorinated
naphthalene) (PNT-F), which have extremely low dielectric constants (below 2.7)
in thin film form.
Page 94
Toh-Ming Lu. lower than that of the conventional polyphenylquinoxaline with a
value of 2.4 against 2.8. Also, a copolymer using a polyimide backbone instead
of PPQ led to a foamed polyimide structure with improved dielectric properties
after ...
Toh-Ming Lu. lower than that of the conventional polyphenylquinoxaline with a
value of 2.4 against 2.8. Also, a copolymer using a polyimide backbone instead
of PPQ led to a foamed polyimide structure with improved dielectric properties
after ...
Page 198
Partial list of materials for intermetal dielectric applications. COMMON
INTEGRATION PROBLEMS In order to successfully integrate the low-dielectric-
constant materials into standard on-chip interconnect structures, the new
materials must ...
Partial list of materials for intermetal dielectric applications. COMMON
INTEGRATION PROBLEMS In order to successfully integrate the low-dielectric-
constant materials into standard on-chip interconnect structures, the new
materials must ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers