Low-dielectric Constant Materials |
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Page 118
The photophysical and photochemical effects associated with RIP allow lower
temperature processing [1-3]. In earlier work [4], it was shown that the use of UV
and VUV photons for curing allowed a lower cure temperature to achieve the
same ...
The photophysical and photochemical effects associated with RIP allow lower
temperature processing [1-3]. In earlier work [4], it was shown that the use of UV
and VUV photons for curing allowed a lower cure temperature to achieve the
same ...
Page 122
FIGURE 6. PHOTON FLUX IN DIFFERENT CURING CONFIGURATIONS AT 400
C WAVELENGTH ( MICRONS ) This enables the same level of immidization to
occur at a lower temperature due to changes □nitiated by high energy photons.
FIGURE 6. PHOTON FLUX IN DIFFERENT CURING CONFIGURATIONS AT 400
C WAVELENGTH ( MICRONS ) This enables the same level of immidization to
occur at a lower temperature due to changes □nitiated by high energy photons.
Page 217
The replacement of plasma-deposited SiO2 as an intermetal dielectric with an
insulator of lower dielectric constant can provide performance improvement
through the reduction of capacitance. A commercially available polyimide,
BiPhenylene ...
The replacement of plasma-deposited SiO2 as an intermetal dielectric with an
insulator of lower dielectric constant can provide performance improvement
through the reduction of capacitance. A commercially available polyimide,
BiPhenylene ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |