Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
From inside the book
Results 1-3 of 60
Page 118
The photophysical and photochemical effects associated with RIP allow lower temperature processing ( 1-3 ) . In earlier work [ 4 ] , it was shown that the use of UV and VUV photons for curing allowed a lower cure temperature to achieve ...
The photophysical and photochemical effects associated with RIP allow lower temperature processing ( 1-3 ) . In earlier work [ 4 ] , it was shown that the use of UV and VUV photons for curing allowed a lower cure temperature to achieve ...
Page 122
SEC ) DIFFERENT CURING 108 107 CONFIGURATIONS AT 400 C BOTTOM + VUV 1 100 105 TOP 으 으으으 으으 으 으으 TOP + BOTTOM BOTTOM 103 102 101 100 0 1 2 3 WAVELENGTH ( MICRONS ) This enables the same level of immidization to occur at a lower ...
SEC ) DIFFERENT CURING 108 107 CONFIGURATIONS AT 400 C BOTTOM + VUV 1 100 105 TOP 으 으으으 으으 으 으으 TOP + BOTTOM BOTTOM 103 102 101 100 0 1 2 3 WAVELENGTH ( MICRONS ) This enables the same level of immidization to occur at a lower ...
Page 217
The replacement of plasma - deposited SiO2 as an intermetal dielectric with an insulator of lower dielectric constant can provide performance improvement through the reduction of capacitance . A commercially available polyimide ...
The replacement of plasma - deposited SiO2 as an intermetal dielectric with an insulator of lower dielectric constant can provide performance improvement through the reduction of capacitance . A commercially available polyimide ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |