Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 118
... Lower temperature processing reduces thermally induced extrinsic stresses and the use of high energy photons lowers the intrinsic stress through a modification of the bonding arrangement of the within the molecules of the polyimide film ...
... Lower temperature processing reduces thermally induced extrinsic stresses and the use of high energy photons lowers the intrinsic stress through a modification of the bonding arrangement of the within the molecules of the polyimide film ...
Page 122
... lower temperature , and at the same time they reduce the intrinsic stress . Lower temperature further reduces the thermal stress , which gives a better insulating and more reliable film . CONCLUSION We have demonstrated the important ...
... lower temperature , and at the same time they reduce the intrinsic stress . Lower temperature further reduces the thermal stress , which gives a better insulating and more reliable film . CONCLUSION We have demonstrated the important ...
Page 217
... lower power dissipation3 . Similar benefits and better reliability are anticipated by switching to a lower resistivity metallization , thus the current emphasis on materials development for Cu - based metallization and polymer ...
... lower power dissipation3 . Similar benefits and better reliability are anticipated by switching to a lower resistivity metallization , thus the current emphasis on materials development for Cu - based metallization and polymer ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch