Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 3
... MATERIAL RESEARCH Chiu H. Ting * Thomas E. Seidel ** SEMATECH 2706 Montopolis Dr. Austin , TX 78741 * On assignment from Intel Corp. ** Chief Technologist and Director of Strategic Technology ABSTRACT For several years the industry has ...
... MATERIAL RESEARCH Chiu H. Ting * Thomas E. Seidel ** SEMATECH 2706 Montopolis Dr. Austin , TX 78741 * On assignment from Intel Corp. ** Chief Technologist and Director of Strategic Technology ABSTRACT For several years the industry has ...
Page 8
... MATERIAL CHARACTERIZATION The organic low k dielectric material must have desired electrical , mechanical , chemical and thermal properties in order to be accepted as ILD material for sub - half micron devices . Under SEMATECH's ...
... MATERIAL CHARACTERIZATION The organic low k dielectric material must have desired electrical , mechanical , chemical and thermal properties in order to be accepted as ILD material for sub - half micron devices . Under SEMATECH's ...
Page 183
... material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive action . The removal of the material from the ...
... material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive action . The removal of the material from the ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch