Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 178
Third, a summary of some of the polymer materials being addressed at
Rensselaer is presented, with an emphasis on materials compatible with in-laid
copper patterning achieved using CMP. Fourth, our results to-date with
benzocyclobutene ...
Third, a summary of some of the polymer materials being addressed at
Rensselaer is presented, with an emphasis on materials compatible with in-laid
copper patterning achieved using CMP. Fourth, our results to-date with
benzocyclobutene ...
Page 198
Partial list of materials for intermetal dielectric applications. COMMON
INTEGRATION PROBLEMS In order to successfully integrate the low-dielectric-
constant materials into standard on-chip interconnect structures, the new
materials must ...
Partial list of materials for intermetal dielectric applications. COMMON
INTEGRATION PROBLEMS In order to successfully integrate the low-dielectric-
constant materials into standard on-chip interconnect structures, the new
materials must ...
Page 218
polymer materials, (2) to highlight changes caused by polyimide in circuit, device
or interconnect parameters, and (3) establish a repeatable baseline process that
provides some circuit yield. The process sequence we followed has been ...
polymer materials, (2) to highlight changes caused by polyimide in circuit, device
or interconnect parameters, and (3) establish a repeatable baseline process that
provides some circuit yield. The process sequence we followed has been ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers