Low-dielectric Constant Materials |
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Page 89
To obtain a measure of the dielectric anisotropy of the thin films we measure the
refractive index of thin film samples. We are able to accurately measure the
anisotropy (the difference between the in-plane and out-of-plane refractive
indices) ...
To obtain a measure of the dielectric anisotropy of the thin films we measure the
refractive index of thin film samples. We are able to accurately measure the
anisotropy (the difference between the in-plane and out-of-plane refractive
indices) ...
Page 258
Table III : Stress Values of the Cured SOG films and Their Variation after the
Water Immersion The stress values were estimated by measuring the wafer
curvature. We also measured their variations after one-hour-long immersion of
the wafers ...
Table III : Stress Values of the Cured SOG films and Their Variation after the
Water Immersion The stress values were estimated by measuring the wafer
curvature. We also measured their variations after one-hour-long immersion of
the wafers ...
Page 275
a-tC RESULTS 12 I 10 i e "3 a 4 Deposited in 10 mTorr H„ 20 25 30 35 40 45 50
55 The resistivities of a-tC films measured from MIM structures exhibit a strong
dependence on the laser energy density and the presence or nature of the gas ...
a-tC RESULTS 12 I 10 i e "3 a 4 Deposited in 10 mTorr H„ 20 25 30 35 40 45 50
55 The resistivities of a-tC films measured from MIM structures exhibit a strong
dependence on the laser energy density and the presence or nature of the gas ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |