Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 131
Figure 12 shows the hydrostatic component of thermal stress in the metal line . The hydrostatic component is the part of the stress that cannot be relieved by plastic flow and is the driving force for failure mechanisms such as voiding ...
Figure 12 shows the hydrostatic component of thermal stress in the metal line . The hydrostatic component is the part of the stress that cannot be relieved by plastic flow and is the driving force for failure mechanisms such as voiding ...
Page 135
... CA ABSTRACT Multilevel interconnects for high performance ULSI need low dielectric constant materials for inter - metal layer dielectric , or ILD , to reduce signal propagation delay , power consumption and cross talk noises .
... CA ABSTRACT Multilevel interconnects for high performance ULSI need low dielectric constant materials for inter - metal layer dielectric , or ILD , to reduce signal propagation delay , power consumption and cross talk noises .
Page 210
Deposit Metal 4. Lift - off metal ; Repeat Figure 6. Fabrication steps for a MCM geometry interconnect system . The dielectric etch step has been adapted to VLSI geometries too . The gap between metal and PA is filled in the next PA ...
Deposit Metal 4. Lift - off metal ; Repeat Figure 6. Fabrication steps for a MCM geometry interconnect system . The dielectric etch step has been adapted to VLSI geometries too . The gap between metal and PA is filled in the next PA ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |