Low-dielectric Constant Materials |
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Page 131
Figure 12 shows the hydrostatic component of thermal stress in the metal line.
The hydrostatic component is the part of the stress that cannot be relieved by
plastic flow and is the driving force for failure mechanisms such as voiding.
Figure 12 shows the hydrostatic component of thermal stress in the metal line.
The hydrostatic component is the part of the stress that cannot be relieved by
plastic flow and is the driving force for failure mechanisms such as voiding.
Page 135
The anisotropy of dielectric properties were determined experimentally, the
vertical (out-of-plane) dielectric properties were determined by MIM (Metal-
Insulator-Metal) measurements, and the horizontal (in-plane) dielectric properties
were ...
The anisotropy of dielectric properties were determined experimentally, the
vertical (out-of-plane) dielectric properties were determined by MIM (Metal-
Insulator-Metal) measurements, and the horizontal (in-plane) dielectric properties
were ...
Page 210
It is dependent on the uniformity of the metal deposition system and
measurement accuracy; and the etch uniformity and measurement. The release
layer has to account for any tolerance in these two processes. Otherwise the
metal may bridge ...
It is dependent on the uniformity of the metal deposition system and
measurement accuracy; and the etch uniformity and measurement. The release
layer has to account for any tolerance in these two processes. Otherwise the
metal may bridge ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |