Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 131
... metal line stress , and stresses are lower than for the elastic cases . Current technologies are represented by the upper left points in Figure 12. All other cases result in lower stresses . The dielectric acts as a constraint to metal ...
... metal line stress , and stresses are lower than for the elastic cases . Current technologies are represented by the upper left points in Figure 12. All other cases result in lower stresses . The dielectric acts as a constraint to metal ...
Page 135
... ( Metal - Insulator - Metal ) measurements , and the horizontal ( in - plane ) dielectric properties were determined by intra - line measurements of sub - half micron serpentine and comb test structures . INTRODUCTION 1,2 The use of low ...
... ( Metal - Insulator - Metal ) measurements , and the horizontal ( in - plane ) dielectric properties were determined by intra - line measurements of sub - half micron serpentine and comb test structures . INTRODUCTION 1,2 The use of low ...
Page 210
... Metal 4. Lift - off metal ; Repeat Figure 6. Fabrication steps for a MCM geometry interconnect system . The dielectric etch step has been adapted to VLSI geometries too . The gap between metal and PA is filled in the next PA deposition ...
... Metal 4. Lift - off metal ; Repeat Figure 6. Fabrication steps for a MCM geometry interconnect system . The dielectric etch step has been adapted to VLSI geometries too . The gap between metal and PA is filled in the next PA deposition ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch