Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page ix
... metal lines is inversely proportional to the square root of the dielectric constant of the insulating materials . The cross - talk between two adjacent lines , which dictates the minimum pitch chip - designers can allow in reducing the ...
... metal lines is inversely proportional to the square root of the dielectric constant of the insulating materials . The cross - talk between two adjacent lines , which dictates the minimum pitch chip - designers can allow in reducing the ...
Page 133
... metal line modulus of the dielectric , increasing its thermal expansion coefficient and allowing elastic- plastic behavior all decrease the stresses in encapsulated metal lines . Increased thermal expansion coefficients increase ...
... metal line modulus of the dielectric , increasing its thermal expansion coefficient and allowing elastic- plastic behavior all decrease the stresses in encapsulated metal lines . Increased thermal expansion coefficients increase ...
Page 135
... metal layer dielectric , or ILD , to reduce signal propagation delay , power ... ( Metal - Insulator - Metal ) measurements , and the horizontal ( in - plane ) ... lines was composed of 1000 Å of undoped plasma enhanced Mat . Res . Soc ...
... metal layer dielectric , or ILD , to reduce signal propagation delay , power ... ( Metal - Insulator - Metal ) measurements , and the horizontal ( in - plane ) ... lines was composed of 1000 Å of undoped plasma enhanced Mat . Res . Soc ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch