Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 47
... Method As an extension of this approach , we have found that the commercially available material , ( C8H4F6 ) 1,4 ... Method BrF2C CF2Br ( Liquid ) PA - F dimer F2 F2 ( Gorham Method ) F2 F2 ( Cracking : 720 ° C , Substrate : -20 ° C ...
... Method As an extension of this approach , we have found that the commercially available material , ( C8H4F6 ) 1,4 ... Method BrF2C CF2Br ( Liquid ) PA - F dimer F2 F2 ( Gorham Method ) F2 F2 ( Cracking : 720 ° C , Substrate : -20 ° C ...
Page 157
... method the decay of a laser pulse impinging on sample is used to determine permittivity . The technique is attractive since it is relatively broadband and can be used for measurements of thin materials in the 10-100 GHz band ...
... method the decay of a laser pulse impinging on sample is used to determine permittivity . The technique is attractive since it is relatively broadband and can be used for measurements of thin materials in the 10-100 GHz band ...
Page 164
... method for determination of complex permittivity in re - entrant cavity : Part A- theoretical analysis of the method , " IEEE Trans . Microwave Theory Tech . , vol . MTT - 28 , no . 3 , pp . 225-228 , 1980 . [ 48 ] J. Baker - Jarvis and ...
... method for determination of complex permittivity in re - entrant cavity : Part A- theoretical analysis of the method , " IEEE Trans . Microwave Theory Tech . , vol . MTT - 28 , no . 3 , pp . 225-228 , 1980 . [ 48 ] J. Baker - Jarvis and ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch