Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 79
In a microelectronic device , the propagation velocity of a pulsed signal , V , is inversely proportional to the square root of the dielectric constant , e , of the propagation medium ( V = c / € ” ) . Therefore the smaller the ...
In a microelectronic device , the propagation velocity of a pulsed signal , V , is inversely proportional to the square root of the dielectric constant , e , of the propagation medium ( V = c / € ” ) . Therefore the smaller the ...
Page 80
In foamed polymers designed for use in microelectronics devices , the pore sizes must be much smaller than the film thickness or any microelectronic features , i.e. s 1 um . Additionally , the foamed polymer should possess as many of ...
In foamed polymers designed for use in microelectronics devices , the pore sizes must be much smaller than the film thickness or any microelectronic features , i.e. s 1 um . Additionally , the foamed polymer should possess as many of ...
Page 141
In general , it is important to understand both the thermal and mechanical properties of a microelectronic material . Thermal and mechanical properties play very important roles in terms of determining the device structural integrity .
In general , it is important to understand both the thermal and mechanical properties of a microelectronic material . Thermal and mechanical properties play very important roles in terms of determining the device structural integrity .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |