Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 79
... microelectronic devices . In these systems the pore sizes are in the nanometer range , thus , the term " nanofoam " . The polyimide foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks ...
... microelectronic devices . In these systems the pore sizes are in the nanometer range , thus , the term " nanofoam " . The polyimide foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks ...
Page 80
... microelectronics devices , the pore sizes must be much smaller than the film thickness or any microelectronic features , i.e. ≤ 1 μm . Additionally , the foamed polymer should possess as many of the favorable properties of the parent ...
... microelectronics devices , the pore sizes must be much smaller than the film thickness or any microelectronic features , i.e. ≤ 1 μm . Additionally , the foamed polymer should possess as many of the favorable properties of the parent ...
Page 141
... microelectronic devices including advanced semiconductor chip and high density packaging . It has the ad- vantages of low dielectric constant , thermal stability and low processing cost . In general , it is important to understand both ...
... microelectronic devices including advanced semiconductor chip and high density packaging . It has the ad- vantages of low dielectric constant , thermal stability and low processing cost . In general , it is important to understand both ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch