Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
From inside the book
Results 1-3 of 37
Page 79
In a microelectronic device , the propagation velocity of a pulsed signal , V , is
inversely proportional to the square root of the dielectric constant , e , of the
propagation medium ( V = c / e " ) . Therefore the smaller the dielectric constant of
the ...
In a microelectronic device , the propagation velocity of a pulsed signal , V , is
inversely proportional to the square root of the dielectric constant , e , of the
propagation medium ( V = c / e " ) . Therefore the smaller the dielectric constant of
the ...
Page 80
In foamed polymers designed for use in microelectronics devices , the pore sizes
must be much smaller than the film thickness or any microelectronic features , i . e
. sium . Additionally , the foamed polymer should possess as many of the ...
In foamed polymers designed for use in microelectronics devices , the pore sizes
must be much smaller than the film thickness or any microelectronic features , i . e
. sium . Additionally , the foamed polymer should possess as many of the ...
Page 141
In general , it is important to understand both the thermal and mechanical
properties of a microelectronic material . Thermal and mechanical properties play
very important roles in terms of determining the device structural integrity .
Mismatch of ...
In general , it is important to understand both the thermal and mechanical
properties of a microelectronic material . Thermal and mechanical properties play
very important roles in terms of determining the device structural integrity .
Mismatch of ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
17 other sections not shown
Other editions - View all
Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers