Low-dielectric Constant Materials |
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Page 60
gaps in the interconnect move well into the sub-half micron regime, models
suggest [3a,b] that the dielectric constants of these materials, which typically fall
between 4 and 10, are too high to effectively minimize the capacitance
associated with ...
gaps in the interconnect move well into the sub-half micron regime, models
suggest [3a,b] that the dielectric constants of these materials, which typically fall
between 4 and 10, are too high to effectively minimize the capacitance
associated with ...
Page 64
Gapfilling Ability of FLARETM The formulation FLARETM 1.0 consistently fills
gaps larger than 0.8 microns on SiO2 wafers. In lower dimensions, voids were
observed by SEM analysis (Figure 3a). Several iterations were attempted to
improve ...
Gapfilling Ability of FLARETM The formulation FLARETM 1.0 consistently fills
gaps larger than 0.8 microns on SiO2 wafers. In lower dimensions, voids were
observed by SEM analysis (Figure 3a). Several iterations were attempted to
improve ...
Page 239
FLUORINATED Si02 FILMS FOR INTERLAYER DIELECTRICS IN QUARTER-
MICRON ULSI MULTILEVEL INTERCONNECTIONS TETSUYA HOMMA ULSI
Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, ...
FLUORINATED Si02 FILMS FOR INTERLAYER DIELECTRICS IN QUARTER-
MICRON ULSI MULTILEVEL INTERCONNECTIONS TETSUYA HOMMA ULSI
Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |