Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 77
... modulus was 9.6 GPa for the alternating copolyimide and 9.1 GPa for the random copolyimide . As presented in Table I , for a chosen copolyimide system the alternating copolyimide exhibited a relatively higher modulus than the ...
... modulus was 9.6 GPa for the alternating copolyimide and 9.1 GPa for the random copolyimide . As presented in Table I , for a chosen copolyimide system the alternating copolyimide exhibited a relatively higher modulus than the ...
Page 131
... modulus . For the elastic- plastic cases , the stress increases only to the yield strength ( 100 MPa ) and does not depend strongly on the modulus . Note that the case closest to current technologies has quite low compressive stress ...
... modulus . For the elastic- plastic cases , the stress increases only to the yield strength ( 100 MPa ) and does not depend strongly on the modulus . Note that the case closest to current technologies has quite low compressive stress ...
Page 133
... Modulus = 120 , elastic Modulus - 30 , elastic Modulus = 120 , plastic Modulus - 30 , plastic 0 0 10 20 30 40 50 60 70 Dielectric Thermal Expansion Coeffient ( 10 ^ -6 / C ) Figure 12. Hydrostatic component of thermal stress in metal line ...
... Modulus = 120 , elastic Modulus - 30 , elastic Modulus = 120 , plastic Modulus - 30 , plastic 0 0 10 20 30 40 50 60 70 Dielectric Thermal Expansion Coeffient ( 10 ^ -6 / C ) Figure 12. Hydrostatic component of thermal stress in metal line ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch